Factory Lead Time  

9 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Weight  

2.421g

Transistor Element Material  

SILICON

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 250μA

Number of Elements  

1

Power Dissipation (Max)  

375W Tc

Turn Off Delay Time  

335 ns

Current - Continuous Drain (Id) @ 25℃  

120A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Published  

2004

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

PowerTrench®

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

ACTIVE (Last Updated: 2 days ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

3.2MOhm

Terminal Finish  

Tin (Sn)

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

375W

Turn On Delay Time  

230 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

3.2m Ω @ 75A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

15160pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

220nC @ 10V

Rise Time  

191ns

Vgs (Max)  

±20V

Fall Time (Typ)  

121 ns

Continuous Drain Current (ID)  

235A

Threshold Voltage  

3.5V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

75V

Pulsed Drain Current-Max (IDM)  

940A

Width  

4.7mm

Length  

10.1mm

Height  

15.38mm

REACH SVHC  

No SVHC

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free